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  6. NP50P06KDG-E1-AY

Renesas | NP50P06KDG-E1-AY

Manufacturer Part #

NP50P06KDG-E1-AY

NP50P06KDG Series P-Channel 60 V 17 mOhm 95 nC Switching MosFet - TO-263

ECAD Model:
Mfr. Name: Renesas
Standard Pkg:
Product Variant Information section
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Product Specification Section
Renesas NP50P06KDG-E1-AY - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 17mΩ
Rated Power Dissipation: 90|W
Qg Gate Charge: 95nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications
The NP50P06KDG-E1-AY is a part of NP50P06KDG series P-Channel switching power MOSFET. It has a storage temperature ranging from -55°C to +175°C and its available in TO-263 package.

The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features:

  • Super low on-state resistance
    • RDS(on)1 = 17 mO MAX. (VGS = -10 V, ID = -25 A)
    • RDS(on)2 = 23 mO MAX. (VGS = -4.5 V, ID = -25 A)
  • Low input capacitance
    • Ciss = 5000 pF TYP

View the available List of P-Channel switching power MOSFET

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
1600
Multiple Of:
800
Total
$2,192.00
USD
Quantity
Unit Price
800
$1.38
1,600
$1.37
3,200
$1.36
4,000+
$1.35
Product Variant Information section