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Manufacturer Part #

SI7252DP-T1-GE3

Dual N-Channel 100 V 18 mOhm 46 W TrenchFET Mosfet - PowerPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2438
Product Specification Section
Vishay SI7252DP-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 18mΩ
Rated Power Dissipation: 3.5W
Qg Gate Charge: 17.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 10.1A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 20ns
Rise Time: 12ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Input Capacitance: 1170pF
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
18,000
Factory Lead Time:
14 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$3,030.00
USD
Quantity
Unit Price
3,000
$1.01
6,000+
$0.985
Product Variant Information section