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Manufacturer Part #
SIHFL9110TR-GE3
-100V, -1.1A, 1.2ohm, Single P-Channel, SOT-223
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:SOT-223 (TO-261-4) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Vishay SIHFL9110TR-GE3 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description of Change: Vishay Siliconix announces that we are going to transfer foundry capacity gradually (phase by phase) to Newport UK for commercial HVM Power MOSFET parts (Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, Israel.Reason for Change: Due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelStart Shipment Date: Monday September 1, 2025
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIHFL9110TR-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/es/p/semiconductors--discretes--transistors--mosfets/sihfl9110tr-ge3-vishay-2128327
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=SIHFL9110TR-GE3&field4=Vishay&field18=https://p1na.futureelectronics.com/es/p/semiconductors--discretes--transistors--mosfets/sihfl9110tr-ge3-vishay-2128327
Vishay SIHFL9110TR-GE3 - Technical Attributes
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | -1.1V |
| Drain-Source On Resistance-Max: | 1.2Ω |
| Rated Power Dissipation: | 3.1W |
| Qg Gate Charge: | 8.7nC |
| Drain Current: | -1.1A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 15ns |
| Rise Time: | 27s |
| Fall Time: | 17ns |
| Operating Temp Range: | -55°C to +150°C |
| Input Capacitance: | 200pF |
| Package Style: | SOT-223 (TO-261-4) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2500 per Reel
Package Style:
SOT-223 (TO-261-4)
Mounting Method:
Surface Mount