text.skipToContent text.skipToNavigation

Truck-Icon.svg Free shipping within the continental US over $50. Conditions apply

warning.svg Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. STB21N65M5

STMicroelectronics | STB21N65M5

Manufacturer Part #

STB21N65M5

N-Channel 710 V 17 A 179 mOhm 125 W Surface Mount Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STB21N65M5 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 150Ω
Rated Power Dissipation: 125|W
Qg Gate Charge: 50nC
Package Style:  TO-263-3 (D2PAK)
Features & Applications

The STB21N65M5 is a N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET. These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features:

  • 100% avalanche tested
  • Worldwide best RDS(on) * area
  • Higher VDSS rating
  • High dv/dt capability
  • Excellent switching performance

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,260.00
USD
Quantity
Unit Price
1,000
$2.26
2,000
$2.25
3,000+
$2.23
Product Variant Information section