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STMicroelectronics | STB30NF20

Manufacturer Part #

STB30NF20

N-Channel 200 V 30 A 75 mOhm 125 W Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2439
Product Specification Section
STMicroelectronics STB30NF20 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.065Ω
Rated Power Dissipation: 125|W
Qg Gate Charge: 38nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STB30NF20 is a N-channel Low gate charge STripFET™ Power MOSFET. This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters. It has an Operating temperature ranges b/w -55 °C to 150 °C and available in a D²PAK Package.

Features:

  • Gate charge minimized
  • 100% avalanche tested
  • Excellent figure of merit (RDS*Qg)
  • Very good manufactuing repeability
  • Very low intrinsic capacitances

Applications:

  • Switching applications
Pricing Section
Global Stock:
4,000
USA:
4,000
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
12 Weeks
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,020.00
USD
Quantity
Unit Price
1,000
$1.02
2,000
$1.00
3,000
$0.99
4,000
$0.985
5,000+
$0.965
Product Variant Information section