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STMicroelectronics | STH2N120K5-2AG

Manufacturer Part #

STH2N120K5-2AG

Mosfet

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STH2N120K5-2AG - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 10Ω
Rated Power Dissipation: 60W
Qg Gate Charge: 5.3nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 1.5A
Turn-on Delay Time: 10.3ns
Turn-off Delay Time: 34ns
Rise Time: 7.8ns
Fall Time: 39ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: MDmesh
Input Capacitance: 124pF
Package Style:  H2PAK
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,280.00
USD
Quantity
Unit Price
1,000
$2.28
2,000
$2.26
3,000+
$2.24
Product Variant Information section