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STMicroelectronics | STH6N95K5-2

Manufacturer Part #

STH6N95K5-2

950 V 1 Ohm typ., 6 A N-Channel MDmesh™ K5 Power Mosfet - H2PAK-2

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STH6N95K5-2 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 950V
Drain-Source On Resistance-Max: 1.25Ω
Rated Power Dissipation: 110|W
Qg Gate Charge: 13nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 6A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 33ns
Rise Time: 12ns
Fall Time: 21ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Height - Max: 4.8mm
Length: 10.4mm
Input Capacitance: 450pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$1,300.00
USD
Quantity
Unit Price
1,000
$1.30
2,000
$1.29
4,000
$1.28
5,000+
$1.27
Product Variant Information section