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Manufacturer Part #

SCT30N120

Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2439
Product Specification Section
STMicroelectronics SCT30N120 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 45A
Input Capacitance: 1700pF
Power Dissipation: 270W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
594
USA:
594
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
17 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$14.94
USD
Quantity
Unit Price
1
$14.94
5
$14.77
30
$14.58
100
$14.46
300+
$14.22
Product Variant Information section