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STMicroelectronics | SCTW90N65G2V

Manufacturer Part #

SCTW90N65G2V

N-Channel 650 V 24 mOhm 565 W Through Hole Silicon Power Mosfet - HiP-247

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Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics SCTW90N65G2V - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 119A
Input Capacitance: 3380pF
Power Dissipation: 565W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
N/A
Minimum Order:
600
Multiple Of:
600
Total
$22,530.00
USD
Quantity
Unit Price
600+
$37.55
Product Variant Information section