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Manufacturer Part #

IRF250

IRF250 Series 200 V 0.085 Ohm Through Hole N-Channel Hexfet Transistor - TO-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF250 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.085Ω
Rated Power Dissipation: 150|W
Qg Gate Charge: 115nC
Package Style:  TO-3 (TO-204)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
100
Multiple Of:
100
Total
$2,400.00
USD
Quantity
Unit Price
100+
$24.00
Product Variant Information section