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Référence fabricant

STP8NK100Z

N-Channel 1 kV 1.85 Ohm Flange Mount SuperMESH™ MOSFET - TO-220

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date: 2449
Product Specification Section
STMicroelectronics STP8NK100Z - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1000V
Drain-Source On Resistance-Max: 1.85Ω
Rated Power Dissipation: 160|W
Qg Gate Charge: 102nC
Style d'emballage :  TO-220-3 (TO-220AB)
Fonctionnalités et applications

The STP8NK100Z is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Features:

  • Extremely High dv/dt Capability
  • 100% Avalanche Rated
  • Improved ESD Capability
  • Very low intrinsic capacitance

Applications:

  • High Current, Switching Application
  • Ideal for off-line power Supplies

View the Complete family of STP8 Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :Order inventroy details
1 800
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
13 Semaines
Commande minimale :
1000
Multiples de :
50
Total 
2 730,00 $
USD
Quantité
Prix unitaire
1
$2.87
25
$2.81
100
$2.76
300
$2.73
1 250+
$2.65
Product Variant Information section