Manufacturer Part #
F411MR12W2M1HPB76BPSA1
1200V, 25A,PACKAGE TBD
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:10 per Cut Tape Package Style:Module Mounting Method:Press Fit | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Infineon F411MR12W2M1HPB76BPSA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Wafer Size Change
04/02/2025 Details and Download
Location Change
02/05/2025 Details and Download
Description:Introduction of an additional wafer production location at Infineon Technologies (Kulim) Sdn. Bhd., Kulim, Malaysia for products with CoolSiC™ MOSFET 1200V Gen. 1.Reason for change:Introduction of an additional wafer production location at Infineon Technologies (Kulim) Sdn. Bhd., Kulim, Malaysia for products with CoolSiC™ MOSFET 1200V Gen. 1.PCN update of PCN110386
Part Status:
Active
Active
Infineon F411MR12W2M1HPB76BPSA1 - Technical Attributes
Attributes Table
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 4 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain-Source On Resistance-Max: | 10.8mΩ |
| Rated Power Dissipation: | 20mW |
| Qg Gate Charge: | 223nC |
| Drain Current: | 150A |
| Turn-on Delay Time: | 43ns |
| Turn-off Delay Time: | 80ns |
| Rise Time: | 53ns |
| Fall Time: | 23ns |
| Operating Temp Range: | -40°C to +175°C |
| Gate Source Threshold: | 4.3V |
| Technology: | TrenchMOS |
| Input Capacitance: | 6.6nF |
| Package Style: | Module |
| Mounting Method: | Press Fit |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
10 Weeks
Quantity
Unit Price
1
$141.50
2
$139.44
3
$138.24
4
$137.40
5+
$134.76
Product Variant Information section
Available Packaging
Package Qty:
10 per Cut Tape
Package Style:
Module
Mounting Method:
Press Fit