Manufacturer Part #
F411MR12W2M1HPB76BPSA1
1200V, 25A,PACKAGE TBD
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:10 per Cut Tape Package Style:Module Mounting Method:Press Fit |
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Infineon F411MR12W2M1HPB76BPSA1 - Product Specification
Shipping Information:
HTS Code:
ECCN:
PCN Information:
Description:Introduction of an additional wafer production location at Infineon Technologies (Kulim) Sdn. Bhd., Kulim, Malaysia for products with CoolSiC™ MOSFET 1200V Gen. 1.Reason for change:Introduction of an additional wafer production location at Infineon Technologies (Kulim) Sdn. Bhd., Kulim, Malaysia for products with CoolSiC™ MOSFET 1200V Gen. 1.PCN update of PCN110386
Part Status:
Infineon F411MR12W2M1HPB76BPSA1 - Technical Attributes
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 4 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain-Source On Resistance-Max: | 10.8mΩ |
| Rated Power Dissipation: | 20mW |
| Qg Gate Charge: | 223nC |
| Drain Current: | 150A |
| Turn-on Delay Time: | 43ns |
| Turn-off Delay Time: | 80ns |
| Rise Time: | 53ns |
| Fall Time: | 23ns |
| Operating Temp Range: | -40°C to +175°C |
| Gate Source Threshold: | 4.3V |
| Technology: | TrenchMOS |
| Input Capacitance: | 6.6nF |
| Package Style: | Module |
| Mounting Method: | Press Fit |
Available Packaging
Package Qty:
10 per Cut Tape
Package Style:
Module
Mounting Method:
Press Fit