Manufacturer Part #
MJD243T4G
MJD Series 100 V 4 A NPN Complementary Silicon Plastic Power Transistor TO-252-3
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Tab Mount | ||||||||||
| Date Code: | 2452 | ||||||||||
Product Specification Section
onsemi MJD243T4G - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi MJD243T4G - Technical Attributes
Attributes Table
| Polarity: | NPN |
| Type: | Power Transistor |
| CE Voltage-Max: | 100V |
| Collector Current Max: | 4A |
| Power Dissipation-Tot: | 1.4W |
| DC Current Gain-Min: | 40 |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Tab Mount |
Features & Applications
The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.
Features:
- Collector-Emitter Sustaining Voltage
- VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
- High DC Current Gain
- hFE = 40 (Min) @ IC= 200 mAdc
- hFE= 15 (Min) @ IC = 1.0 Adc
- Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
- Straight Lead Version in Plastic Sleeves ("-1" Suffix)
- Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
- Low Collector-Emitter Saturation Voltage -
- VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
- VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
- High Current-Gain-Bandwith Product -
- fT = 40MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakage -
- ICBO = 100 nAdc @ Rated VCB
- Pb-Free Packages are Available
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
25 Weeks
Quantity
Unit Price
2,500
$0.245
5,000+
$0.24
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Tab Mount