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Manufacturer Part #

MJD243T4G

MJD Series 100 V 4 A NPN Complementary Silicon Plastic Power Transistor TO-252-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2452
Product Specification Section
onsemi MJD243T4G - Technical Attributes
Attributes Table
Polarity: NPN
Type: Power Transistor
CE Voltage-Max: 100V
Collector Current Max: 4A
Power Dissipation-Tot: 1.4W
DC Current Gain-Min: 40
Package Style:  TO-252-3 (DPAK)
Mounting Method: Tab Mount
Features & Applications

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications.

Features:

  • Collector-Emitter Sustaining Voltage
    • VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain
    • hFE = 40 (Min) @ IC= 200 mAdc
    • hFE= 15 (Min) @ IC = 1.0 Adc
  • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
  • Straight Lead Version in Plastic Sleeves ("-1" Suffix)
  • Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
  • Low Collector-Emitter Saturation Voltage -
    • VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    • VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc
  • High Current-Gain-Bandwith Product -
    • fT = 40MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    • ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
25 Weeks
Minimum Order:
5000
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,200.00
USD
Quantity
Unit Price
2,500
$0.245
5,000+
$0.24
Product Variant Information section