onsemi | MBRS320T3G

The MBRS320T3 devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Key Features:

• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop (0.5 V Max @ 3.0 A, TJ = 25°C)
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
• Device Passes ISO 7637 Pulse #1
• Pb−Free Packages are Available

Characteristics:

• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Device Meets MSL 1 Requirements
• ESD Ratings: Machine Model, C > 400 V
• Human Body Model, 3B > 8000 V