onsemi | MBRS360T3G

The MBRS360T3 devices employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Key Features:

• Small Compact Surface Mountable Package with J−Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Excellent Ability to Withstand Reverse Avalanche Energy Transients
• Guard−Ring for Stress Protection
• Pb−Free Package is Available

Characteristics:

• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight:
  • 217 mg (Approximately), SMC
  • 95 mg (Approximately), SMB
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
• Polarity: Notch in Plastic Body Indicates Cathode Lead
• Device Meets MSL 1 Requirements
• ESD Ratings:
  • Machine Model, C
  • Human Body Model, 3B