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Manufacturer Part #

GNP1150TCA-ZE2

650V 11A 150 mOhm N-ch DFN8080AK, E-mode Gallium-Nitride(GaN) FET

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
ROHM GNP1150TCA-ZE2 - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 11A
No of Channels: 1
Qg Gate Charge: 2.7nC
Drain-to-Source Voltage [Vdss]: 650V
Gate-Source Voltage-Max [Vgss]: 6V
Input Capacitance: 112pF
Rated Power Dissipation: 46.3W
Operating Temp Range: 150°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
3500
Multiple Of:
3500
Total
$8,925.00
USD
Quantity
Unit Price
1
$2.80
15
$2.72
100
$2.66
400
$2.62
2,000+
$2.55
Product Variant Information section