text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Gallium Nitride MOSFETs (GaN MOSFETs)
  6. IGC025S08S1XTMA1

Infineon | IGC025S08S1XTMA1

Manufacturer Part #

IGC025S08S1XTMA1

CoolGaN Series 80 V 23 A 2.5 mOhm Single N-Channel GaN MOSFET - PG-TSON‑6

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IGC025S08S1XTMA1 - Technical Attributes
Attributes Table
Product Status: Active
Technology: GaNFET (Gallium Nitride)
Fet Type: N-Ch
Drain Current: 23A
No of Channels: 1
Qg Gate Charge: 9.5nC
Drain-to-Source Voltage [Vdss]: 80V
Gate-Source Voltage-Max [Vgss]: 6.5V
Input Capacitance: 1100pF
Rated Power Dissipation: 3.3W
Operating Temp Range: -40°C to +150°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$8,000.00
USD
Quantity
Unit Price
5,000+
$1.60
Product Variant Information section
Resources, Articles, News & Events
Article
2025-10-16
Infineon — 100 V GaN Transistors

Infineon 100 V GaN transistors deliver high efficiency, power den