Manufacturer Part #
RGT8BM65DTL
RGT8BM65D Series 650 V 8 A 62 W Field Stop Trench IGBT - TO-252-3
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| Mfr. Name: | ROHM | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2518 | ||||||||||
ROHM RGT8BM65DTL - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description:Relocation of FAB line to Shiga Plant due to the end of production of IGBT products at Miyazaki and change of FRD wafer coating material (polyimide) Reason:ROHM plan to discontinue production of IGBT products at the Miyazaki Plant 6inch production line, and ROHM will continue production of these products by relocating them to the Shiga Plant 8inch line. In addition, for FRD products (ROHM Wako Co.,Ltd.), ROHM will change the wafer coating material.Planned first ship date May 31, 2026 Sample available schedule October 1, 2025
Detailed description of changeAssembly factory :ROHM Korea CorporationNew:Assembly factory :ROHM Korea Corporation Sub contract assembly factory (GEM Electoronics (Hefei) Co.,Ltd)Reason:In order to increase the production capacity and secure a stable product supply.Planned first ship date: March 1, 2024
Part Status:
ROHM RGT8BM65DTL - Technical Attributes
| CE Voltage-Max: | 2.1V |
| Collector Current @ 25C: | 8A |
| Power Dissipation-Tot: | 62W |
| Gate - Emitter Voltage: | 30V |
| Pulsed Collector Current: | 12A |
| Collector - Emitter Saturation Voltage: | 1.65V |
| Turn-on Delay Time: | 17ns |
| Turn-off Delay Time: | 86ns |
| Qg Gate Charge: | 13.5nC |
| Reverse Recovery Time-Max: | 94ns |
| Leakage Current: | 200nA |
| Input Capacitance: | 220pF |
| Thermal Resistance: | 2.4°C/W |
| Operating Temp Range: | -40°C to +175°C |
| No of Terminals: | 3 |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount