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STMicroelectronics | STGB10NC60KDT4

Manufacturer Part #

STGB10NC60KDT4

STGB10NC60KD Series Low On State Surface Mount IGBT - TO-263-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics STGB10NC60KDT4 - Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 20A
Power Dissipation-Tot: 65W
Gate - Emitter Voltage: ±20V
Pulsed Collector Current: 30A
Collector - Emitter Saturation Voltage: 2.5V
Turn-on Delay Time: 17ns
Turn-off Delay Time: 72ns
Qg Gate Charge: 19nC
Reverse Recovery Time-Max: 22ns
Leakage Current: -100A
Input Capacitance: 380pF
Thermal Resistance: 62.5°C/W
Operating Temp Range: -55°C to +150°C
No of Terminals: 3
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The STGB10NC60KDT4 is a N-Channel Short Circuit PowerMESH IGBT Transistor. This resulting in an excellent trade-off between switching performance and low on-state behavior.

Features:

  • Lower on voltage drop (VCE(sat))
  • Lower CRES / CIES ratio (no cross-conduction susceptibility)
  • Very soft ultra fast recovery antiparallel diode
  • Short-circuit withstand time 10μs

Applications:

  • High frequency motor controls
  • SMPS and PFC in both hard switch and resonant topologies
  • Motor drives
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
2000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,140.00
USD
Quantity
Unit Price
1,000
$0.575
2,000
$0.57
4,000
$0.56
15,000+
$0.545
Product Variant Information section