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Nexperia | BUK9Y65-100E,115

Manufacturer Part #

BUK9Y65-100E,115

MOSFET N-channel 100 V 65 mo FET

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Nexperia BUK9Y65-100E,115 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 63.3mΩ
Rated Power Dissipation: 64W
Qg Gate Charge: 14nC
Gate-Source Voltage-Max [Vgss]: 10V
Drain Current: 19A
Turn-on Delay Time: 8.1ns
Turn-off Delay Time: 19.3ns
Rise Time: 13.6ns
Fall Time: 12.6ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.7V
Technology: TrenchMOS
Input Capacitance: 1142pF
Package Style:  POWERSO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
1500
Total
$705.00
USD
Quantity
Unit Price
1,500
$0.235
4,500
$0.23
15,000
$0.225
30,000+
$0.22
Product Variant Information section