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Diodes Incorporated | DMN2016UTS-13

Manufacturer Part #

DMN2016UTS-13

Dual N-Channel 20 V 14.5 mOhm Enhancement Mode Mosfet

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN2016UTS-13 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 14.5mΩ
Rated Power Dissipation: 880|mW
Qg Gate Charge: 16.5nC
Package Style:  TSSOP-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$750.00
USD
Quantity
Unit Price
2,500
$0.30
5,000
$0.295
12,500
$0.29
25,000+
$0.285
Product Variant Information section