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Référence fabricant

FDC6561AN

Dual N-Channel 30 V 0.095 Ohm Logic Level PowerTrench Mosfet SSOT-6

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2429
Product Specification Section
onsemi FDC6561AN - Caractéristiques techniques
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.095Ω
Rated Power Dissipation: 0.7|W
Qg Gate Charge: 3.2nC
Style d'emballage :  SSOT-6
Méthode de montage : Surface Mount
Fonctionnalités et applications

The FDC6561AN is a 30 V 0.095 Ω Dual N-Channel Logic Level PowerTrench Mosfet available in SSOT-6 package .

These N-Channel Logic Level MOSFETs are advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.     These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

Features:

  • 2.5 A, 30 V.   RDS(ON) = 0.095 Ω @ VGS = 10 V, RDS(ON) = 0.145 Ω @ VGS = 4.5 V.
  • Very fast switching.
  • Low gate charge (2.1nC typical).
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices
Pricing Section
Stock global :
9 000
États-Unis:
9 000
Sur commande :Order inventroy details
24 000
Stock d'usine :Stock d'usine :
0
Délai d'usine :
15 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
675,00 $
USD
Quantité
Prix unitaire
3 000
$0.225
6 000
$0.22
15 000+
$0.215
Product Variant Information section