Manufacturer Part #
FDS9926A
Dual N-Channel 20 V 30 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
| | |||||||||||
| | |||||||||||
| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:SOIC-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2525 | ||||||||||
Product Specification Section
onsemi FDS9926A - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi FDS9926A - Technical Attributes
Attributes Table
| Fet Type: | Dual N-Ch |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 30mΩ |
| Rated Power Dissipation: | 0.9|W |
| Qg Gate Charge: | 9nC |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Features & Applications
The FDS9926A is a 20 V 30 mΩ 2.5 V Dual N-Channel MOSFETs use advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V – 10 V).
Features:
- 6.5 A, 20 V
- RDS(ON) = 30 mΩ @ VGS = 4.5 V
- RDS(ON) = 43 mΩ @ VGS = 2.5 V
- Optimized for use in battery protection circuits
- ±10 VGSS allows for wide operating voltage range
- Low gate charge
Applications:
- Power management
- Load switch
- Battery protection
Pricing Section
Global Stock:
2,500
USA:
2,500
On Order:
0
Factory Lead Time:
13 Weeks
Quantity
Unit Price
2,500
$0.22
5,000
$0.215
37,500+
$0.21
Product Variant Information section
Available Packaging
Package Qty:
2500 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount