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Manufacturer Part #

IMZA65R020M2HXKSA1

N-Channel 650 V 83A (Tc) 273W (Tc) Through Hole PG-TO247-4-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2514
Product Specification Section
Infineon IMZA65R020M2HXKSA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 24mΩ
Rated Power Dissipation: 273W
Qg Gate Charge: 57nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 83A
Turn-on Delay Time: 10.3ns
Turn-off Delay Time: 19ns
Rise Time: 12ns
Fall Time: 5.6ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5.6V
Technology: SiC
Input Capacitance: 2038pF
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
240
Multiple Of:
240
Total
$1,939.20
USD
Quantity
Unit Price
240+
$8.08
Product Variant Information section