Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Free shipping within the continental US over $50. Conditions apply
Manufacturer Part #
IPF009N04NF2SATMA1
N-Channel 40 V 0.9 mOhm 210 nC SMT StrongIRFETTM2 Power Mosfet - PG-TO-263-7
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:800 per Package Style:TO-263-7 (D2PAK7) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2246 | ||||||||||
Product Specification Section
Infineon IPF009N04NF2SATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
08/14/2025 Details and Download
Description of Change:Capacity expansion by introduction of an additional assembly and test location at Huayi Microelectronics Co., Ltd (HYME), China for dedicated N-channel power MOSFETs in PG-TO252-3 and PGTO263- 3 package.Reason for Change:Capacity expansion for existing assembly and final test site at Great Team Backend Foundry (GTBF)
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPF009N04NF2SATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipf009n04nf2satma1-infineon-5196455
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPF009N04NF2SATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipf009n04nf2satma1-infineon-5196455
Infineon IPF009N04NF2SATMA1 - Technical Attributes
Attributes Table
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 0.9mΩ |
| Rated Power Dissipation: | 3.8W |
| Qg Gate Charge: | 210nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 49A |
| Turn-on Delay Time: | 27ns |
| Turn-off Delay Time: | 90ns |
| Rise Time: | 51ns |
| Fall Time: | 40ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.8V |
| Input Capacitance: | 14900pF |
| Series: | StrongIRFET 2 |
| Package Style: | TO-263-7 (D2PAK7) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
50
USA:
50
Product Variant Information section
Available Packaging
Package Qty:
800 per
Package Style:
TO-263-7 (D2PAK7)
Mounting Method:
Surface Mount