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Infineon | IPN60R600P7SATMA1

Manufacturer Part #

IPN60R600P7SATMA1

Single N-Channel 600 V 600 mOhm 9 nC CoolMOS™ Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2520
Product Specification Section
Infineon IPN60R600P7SATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.6Ω
Rated Power Dissipation: 7W
Qg Gate Charge: 9nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 37ns
Rise Time: 6ns
Fall Time: 19ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 363pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$615.00
USD
Quantity
Unit Price
3,000
$0.205
9,000
$0.20
30,000+
$0.196
Product Variant Information section