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Manufacturer Part #

IPW65R080CFDFKSA2

N-Channel 650 V 43.3 A 391 W Through Hole Power Mosfet - PG-TO247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2328
Product Specification Section
Infineon IPW65R080CFDFKSA2 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 80mΩ
Rated Power Dissipation: 391W
Qg Gate Charge: 167nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 43.3A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 85ns
Rise Time: 18ns
Fall Time: 6ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 5030pF
Series: CoolMOS CFD2
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
240
USA:
240
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$135.00
USD
Quantity
Unit Price
30
$4.50
120
$4.42
300
$4.38
750
$4.33
1,200+
$4.26
Product Variant Information section