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Référence fabricant
IPW65R080CFDFKSA2
N-Channel 650 V 43.3 A 391 W Through Hole Power Mosfet - PG-TO247-3
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| Nom du fabricant: | Infineon | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :30 par Tube Style d'emballage :TO-247-3 Méthode de montage :Through Hole | ||||||||||
| Code de date: | 2328 | ||||||||||
Infineon IPW65R080CFDFKSA2 - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Detailed change informationSubject :Product Expansion at Huayi Microelectronics Co., Ltd (HYME) for selected CoolMOSTM products in PG-TO247-3 package.Reason:Expansion of assembly and test production to assure continuity and enable flexible manufacturing for additional CoolMOSTM products. Other Infineon Technologies CoolMOSTM products in TO247-3 package at HYME were qualified earlier and communicated to customers through PCN 2022-082-A.
Introduction of an additional assembly and test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) for TO247-3 products.Detailed change information:Subject:Introduction of an additional assembly and final test location site, Tongfu Tongke (Nantong) Microelectronics Co., Ltd. (TFTK) forTO247-3 products.Reason :Expansion of assembly and test location to assure continuity and increase of supply
Statut du produit:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IPW65R080CFDFKSA2&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipw65r080cfdfksa2-infineon-4183510
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=fr&field2=IPW65R080CFDFKSA2&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipw65r080cfdfksa2-infineon-4183510
Infineon IPW65R080CFDFKSA2 - Caractéristiques techniques
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 80mΩ |
| Rated Power Dissipation: | 391W |
| Qg Gate Charge: | 167nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 43.3A |
| Turn-on Delay Time: | 20ns |
| Turn-off Delay Time: | 85ns |
| Rise Time: | 18ns |
| Fall Time: | 6ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | CoolMOS |
| Input Capacitance: | 5030pF |
| Series: | CoolMOS CFD2 |
| Style d'emballage : | TO-247-3 |
| Méthode de montage : | Through Hole |
Emballages disponibles
Qté d'emballage(s) :
30 par Tube
Style d'emballage :
TO-247-3
Méthode de montage :
Through Hole