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Infineon | IRF7493TRPBF

Manufacturer Part #

IRF7493TRPBF

Single N-Channel 80 V 15 mOhm 53 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRF7493TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 15mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 53nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 9.3A
Turn-on Delay Time: 8.3ns
Turn-off Delay Time: 30ns
Rise Time: 7.5ns
Fall Time: 12ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 1510pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$2,100.00
USD
Quantity
Unit Price
4,000
$0.525
8,000
$0.52
12,000+
$0.51
Product Variant Information section