text.skipToContent text.skipToNavigation

Manufacturer Part #

IRFB38N20DPBF

Single N-Channel 200 V 0.054 Ohm 91 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 2507
Product Specification Section
Infineon IRFB38N20DPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.054Ω
Rated Power Dissipation: 3.8W
Qg Gate Charge: 91nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 43A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 29ns
Rise Time: 95ns
Fall Time: 47ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 2900pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Pricing Section
Global Stock:
8,950
Germany:
8,950
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$45.75
USD
Quantity
Unit Price
50
$0.915
200
$0.885
750
$0.865
1,250
$0.855
2,500+
$0.825