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  6. IRFB4115PBF

Infineon | IRFB4115PBF

Référence fabricant

IRFB4115PBF

Single N-Channel 150V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

Modèle ECAD:
Nom du fabricant: Infineon
Emballage standard:
Product Variant Information section
Code de date: 2239
Product Specification Section
Infineon IRFB4115PBF - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 11mΩ
Rated Power Dissipation: 380W
Qg Gate Charge: 120nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 104A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 41ns
Rise Time: 73ns
Fall Time: 39ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5V
Technology: Si
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 5270pF
Style d'emballage :  TO-220-3 (TO-220AB)
Méthode de montage : Through Hole
Fonctionnalités et applications
This new family of benchmark performance MOSFETS from 60V-200V offer up to 20% lower RDS(on) than previous versions.  These MOSFETs are ideal for high current DC/DC switching applications and high current DC motor drive applications. The low RDS(on) helps improve thermal efficiency that is crucial to any high current design.  In addition to low RDS(on), this is the first family of MOSFETs on the market to offer a package current rating of 195A for TO-220, D2PAK and TO-262 which is more than 60% improvement from typical package ratings. Most competitors only rate their packages to 120A. The D2PAK reduces RDS(on) even further by as much as 16% over a standard D2PAK and has a package ID rating of 240A which makes it one of the most rugged surface mount packages on the market.

The IRFB4115PbF features TrenchFET Gen 6 Technology.  This 150Volt, 104Amp N-channel device in the TO-220 package, features maximum on-resistance of 11 milliohms at a 10-V gate drive voltage. Specifically designed for applications such as:

  • Power supplies
  • High power DC motors
  • Inverters
  • Power tools

Features and benefits include:

  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and di/dt capability
  • Lead-free, RoHS Compliant
  • Qualified to industrial grade and MSL1
Pricing Section
Stock global :
385
États-Unis:
385
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
26 Semaines
Commande minimale :
1
Multiples de :
1
Total 
0,94 $
USD
Quantité
Prix unitaire
1
$0.94
40
$0.915
200
$0.885
750
$0.865
3 000+
$0.815
Product Variant Information section