text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. NTS2101PT1G

onsemi | NTS2101PT1G

Manufacturer Part #

NTS2101PT1G

P-Channel 8 V 65 mOhm 0.29 W Surface Mount Power MOSFET - SOT-323

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2516
Product Specification Section
onsemi NTS2101PT1G - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 8V
Drain-Source On Resistance-Max: 100mΩ
Rated Power Dissipation: 0.29|W
Qg Gate Charge: 6.4nC
Package Style:  SOT-323 (SC-70)
Mounting Method: Surface Mount
Features & Applications

The NTS2101PT1G is a part of NTS2101P series P-channel power MOSFET. It has a storage temperature ranging from -55°C to +150°C and its available in SOT-323 package.

Features:

  • Leading Trench Technology for Low RDS(on) Extending Battery Life
  • −1.8 V Rated for Low Voltage Gate Drive
  • SC−70 Surface Mount for Small Footprint (2 x 2 mm)
  • Pb−Free Package is Available

Applications:

  • High Side Load Switch
  • Charging Circuit
  • Single Cell Battery Applications such as Cell Phones, Digital Cameras, PDAs, etc.
Pricing Section
Global Stock:
9,000
USA:
9,000
On Order:Order inventroy details
18,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
32 Weeks
Minimum Order:
3000
Multiple Of:
3000
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$176.70
USD
Quantity
Unit Price
3,000
$0.0589
9,000
$0.0575
15,000
$0.0569
60,000
$0.0552
90,000+
$0.054
Product Variant Information section