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Manufacturer Part #

SI4100DY-T1-E3

N-Channel 100 V 63 mOhm 20 nC SMT TrenchFET Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SI4100DY-T1-E3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 63mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 13.5nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,775.00
USD
Quantity
Unit Price
2,500
$1.11
5,000
$1.10
7,500+
$1.09
Product Variant Information section