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Manufacturer Part #

SISA96DN-T1-GE3

Single N-Channel 30 V 8.8 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2416
Product Specification Section
Vishay SISA96DN-T1-GE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 8.8mΩ
Rated Power Dissipation: 3.5W
Qg Gate Charge: 20.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 14.8A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 13ns
Rise Time: 25ns
Fall Time: 9ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.2V
Input Capacitance: 1385pF
Series: TrenchFET
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
15,000
Factory Lead Time:
33 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$423.00
USD
Quantity
Unit Price
3,000
$0.141
9,000
$0.138
12,000
$0.137
30,000
$0.135
45,000+
$0.133
Product Variant Information section