Manufacturer Part #
STB150NF55T4
STB150 Series 55 V 120 A 6 mOhm 300 W 140 nC N-Channel MOSFET - D2PAK
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
STMicroelectronics STB150NF55T4 - Product Specification
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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STMicroelectronics STB150NF55T4 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 55V |
| Drain-Source On Resistance-Max: | 0.006Ω |
| Rated Power Dissipation: | 300W |
| Qg Gate Charge: | 190nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 120A |
| Turn-on Delay Time: | 35ns |
| Turn-off Delay Time: | 140ns |
| Rise Time: | 180ns |
| Fall Time: | 80ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 4V |
| Technology: | Si |
| Height - Max: | 4.6mm |
| Length: | 10.4mm |
| Input Capacitance: | 4400pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The STB150NF55T4 is a N-channel II Power MOSFET it is latest development with unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Features:
- Drain-source voltage (VGS = 0) 55 V
- 100% avalanche tested
- Max. operating junction temperature -55 °C to 175 °C
Applications:
- Switching application
Pricing Section
Global Stock:
0
USA:
0
Factory Lead Time:
13 Weeks
Quantity
Unit Price
1,000
$1.52
2,000
$1.51
3,000
$1.50
5,000+
$1.48
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount