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STMicroelectronics | STB32N65M5

Référence fabricant

STB32N65M5

N-Channel 650 V 24 A 119 mOhm 150 W Surface Mount MDmesh Power Mosfet - D2PAK

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STB32N65M5 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 119mΩ
Rated Power Dissipation: 150|W
Qg Gate Charge: 72nC
Style d'emballage :  TO-263-3 (D2PAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The STB32N65M5 is a N-channel 650 V, 0.095 Ω, 24 A, MDmesh™ V Power MOSFET. These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.

The resulting product has extremely low on-resistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. It is available in a D²PAK Package.

Features:

  • Worldwide best RDS(on)* area
  • Higher VDSS rating
  • High dv/dt capability
  • Excellent switching performance
  • Easy to drive
  • 100% avalanche tested

Applications:

  • Switching applications
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
36 Semaines
Commande minimale :
1000
Multiples de :
1000
Total 
13 280,00 $
USD
Quantité
Prix unitaire
1 000+
$13.28
Product Variant Information section