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Manufacturer Part #
STB6NK90ZT4
Single N-Channel 900 V 2 Ohm 60.5 nC 140 W Silicon SMT Mosfet - TO-263-3
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2351 | ||||||||||
STMicroelectronics STB6NK90ZT4 - Product Specification
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STMicroelectronics STB6NK90ZT4 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 900V |
| Drain-Source On Resistance-Max: | 2Ω |
| Rated Power Dissipation: | 140W |
| Qg Gate Charge: | 60.5nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 5.8A |
| Turn-on Delay Time: | 17ns |
| Turn-off Delay Time: | 20ns |
| Rise Time: | 45ns |
| Fall Time: | 20ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4.5V |
| Technology: | Si |
| Height - Max: | 4.6mm |
| Length: | 10.4mm |
| Input Capacitance: | 1350pF |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Features & Applications
The STB6NK90ZT4 is a N-channel Zener-protected SuperMESH™ Power MOSFET. The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs. It has an Operating temperature ranges b/w -55 °C to 150 °C and available in a D²PAK Package.
Features:
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
- Very good manufacturing repeatability
Applications:
- Switching applications
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount