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Référence fabricant

STB6NK90ZT4

Single N-Channel 900 V 2 Ohm 60.5 nC 140 W Silicon SMT Mosfet - TO-263-3

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date: 2351
Product Specification Section
STMicroelectronics STB6NK90ZT4 - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 900V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 140W
Qg Gate Charge: 60.5nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 5.8A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 20ns
Rise Time: 45ns
Fall Time: 20ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4.5V
Technology: Si
Height - Max: 4.6mm
Length: 10.4mm
Input Capacitance: 1350pF
Style d'emballage :  TO-263-3 (D2PAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The STB6NK90ZT4 is a N-channel Zener-protected SuperMESH™ Power MOSFET. The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs. It has an Operating temperature ranges b/w -55 °C to 150 °C and available in a D²PAK Package.

Features:

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Gate charge minimized
  • Very low intrinsic capacitance
  • Very good manufacturing repeatability

Applications:

  • Switching applications
Pricing Section
Stock global :
1 000
États-Unis:
1 000
Sur commande :Order inventroy details
3 000
Stock d'usine :Stock d'usine :
0
Délai d'usine :
26 Semaines
Commande minimale :
1000
Multiples de :
1000
Total 
3 540,00 $
USD
Quantité
Prix unitaire
1 000
$3.54
2 000+
$3.50
Product Variant Information section