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STMicroelectronics | STL13NM60N

Manufacturer Part #

STL13NM60N

N-Channel 600 V 0.385 Ohm MDmesh II Power MosFet - PowerFLAT

ECAD Model:
Mfr. Name: STMicroelectronics
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Product Specification Section
STMicroelectronics STL13NM60N - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 0.385Ω
Rated Power Dissipation: 90|W
Qg Gate Charge: 30nC
Package Style:  POWER FLAT
Mounting Method: Surface Mount
Features & Applications
The STL13NM60N is a N-channel MDmesh™ II Power MOSFET. This device is a N-channel Power MOSFETs made using the second generation of MDmesh™ technology.

This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. It is available in a PowerFLAT™ (8x8) Package.

Features:

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
14 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$3,690.00
USD
Quantity
Unit Price
3,000+
$1.23
Product Variant Information section