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STMicroelectronics | STP2NK90Z

Manufacturer Part #

STP2NK90Z

N-Channel 900 V 5 Ohm 2.1 A Power Mosfet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
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Product Variant Information section
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Product Specification Section
STMicroelectronics STP2NK90Z - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 900V
Drain-Source On Resistance-Max: 6.5Ω
Rated Power Dissipation: 70W
Qg Gate Charge: 19.5nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 2.1A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 43ns
Rise Time: 11ns
Fall Time: 40ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.75V
Input Capacitance: 485pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The STP2NK90Z is a N-Channel Zener-Protected SuperMESH™ MOSFET. It has an Operating temperature ranges b/w -55 °C to 150 °C and available in  TO-220 package.

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Features:

  • Extremely high dv/dt capability
  • Improved esd capability
  • 100% avalanche rated
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatibility

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
15 Weeks
Minimum Order:
2000
Multiple Of:
50
Total
$1,430.00
USD
Quantity
Unit Price
50
$0.755
250
$0.73
1,000
$0.715
2,500
$0.70
6,250+
$0.675
Product Variant Information section