text.skipToContent text.skipToNavigation

Référence fabricant

STP4NK60ZFP

N-Channel 600 V 4 A 2 Ohm Through Hole SuperMESH™ Power Mosfet - TO-220FP

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STP4NK60ZFP - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 25|W
Qg Gate Charge: 18.8nC
Style d'emballage :  TO-220FP (TO-220FPAB)
Fonctionnalités et applications

The STP4NK60ZFP is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Features:

  • 100% avalanche tested
  • Very low intrinsic capacitances

Applications:

  • Switching applications

View the Complete family of STP4 Mosfet Transistors

Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
13 Semaines
Commande minimale :
3000
Multiples de :
50
Total 
2 370,00 $
USD
Quantité
Prix unitaire
50
$0.85
200
$0.825
1 000
$0.80
2 000
$0.79
6 250+
$0.765
Product Variant Information section