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STMicroelectronics | STP4NK80Z

Manufacturer Part #

STP4NK80Z

N-Channel 800 V 3.5 Ohm 22.5 nC SuperMESH™ MosFet - TO-220

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP4NK80Z - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 3.5Ω
Rated Power Dissipation: 80|W
Qg Gate Charge: 22.5nC
Package Style:  TO-220-3 (TO-220AB)
Features & Applications

The STP4NK80Z is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Features:

  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatibility

Applications:

  • Switching application
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
2000
Multiple Of:
50
Total
$1,680.00
USD
Quantity
Unit Price
50
$0.90
200
$0.875
1,000
$0.85
2,000
$0.84
6,250+
$0.81
Product Variant Information section