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Manufacturer Part #

STP4NK60ZFP

N-Channel 600 V 4 A 2 Ohm Through Hole SuperMESH™ Power Mosfet - TO-220FP

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics STP4NK60ZFP - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 25|W
Qg Gate Charge: 18.8nC
Package Style:  TO-220FP (TO-220FPAB)
Features & Applications

The STP4NK60ZFP is a SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Features:

  • 100% avalanche tested
  • Very low intrinsic capacitances

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
13 Weeks
Minimum Order:
3000
Multiple Of:
50
Total
$2,370.00
USD
Quantity
Unit Price
50
$0.85
200
$0.825
1,000
$0.80
2,000
$0.79
6,250+
$0.765
Product Variant Information section