Manufacturer Part #
IMBG120R350M1HXTMA1
CoolSiC Series N-Channel 1200V 4.7A 468mOhm 5.9 nC 65W 196 pF SiC PG-TO263-7-12
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-7 (D2PAK7) Mounting Method:Surface Mount |
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| Date Code: | 2326 | ||||||||||
Product Specification Section
Infineon IMBG120R350M1HXTMA1 - Product Specification
Infineon IMBG120R350M1HXTMA1 - Technical Attributes
Attributes Table
| Technology: | SiCFET (Silicon Carbide) |
| Product Status: | Active |
| Fet Type: | N-Ch |
| No. of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 1200V |
| Drain Current: | 4.7A |
| Input Capacitance: | 196pF |
| Power Dissipation: | 65W |
| Operating Temp Range: | -55°C to +175°C |
| Package Style: | TO-263-7 (D2PAK7) |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
2,000
USA:
2,000
On Order:
0
Factory Lead Time:
26 Weeks
Quantity
Unit Price
1,000
$1.98
2,000
$1.97
3,000
$1.96
4,000+
$1.95
Product Variant Information section
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-7 (D2PAK7)
Mounting Method:
Surface Mount