text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Silicon Carbide MOSFETs (SiC MOSFETs)
  6. IMZA65R083M1HXKSA1

Infineon | IMZA65R083M1HXKSA1

Manufacturer Part #

IMZA65R083M1HXKSA1

IMZA Series N-Channel 650 V 26A 104W TH Silicon Carbide MOSFET TO-247-4

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2250
Product Specification Section
Infineon IMZA65R083M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 26A
Input Capacitance: 624pF
Power Dissipation: 104W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
240
USA:
240
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$98.10
USD
Quantity
Unit Price
30
$3.27
90
$3.23
150
$3.21
600
$3.15
900+
$3.11
Product Variant Information section