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STMicroelectronics | SCT025H120G3AG

Manufacturer Part #

SCT025H120G3AG

SiC Power Mosfet 1200V, RDSon 27.5 mOhms, ID 55A.

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
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Product Specification Section
STMicroelectronics SCT025H120G3AG - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1.2kV
Drain Current: 55A
Input Capacitance: 1990pF
Power Dissipation: 375W
Operating Temp Range: -55°C to +175°C
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
16 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$9,090.00
USD
Quantity
Unit Price
1,000+
$9.09
Product Variant Information section