Everspin Technologies | MR0A16ACYS35R

The MR0A16ACYS35R is a magnetoresistive random access memory (MRAM) device organized as 65,536 words of 16 bits. It is available in 44-pin thin small outline package (TSOP Type 2) with commercial temperature range of 0 to +70 °C.

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20 years. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Features:

• 3.3 Volt power supply
• Fast 35ns read/write cycle
• SRAM compatible timing
• Unlimited read & write endurance
• Commercial, Industrial, and Extended Temperatures
• Data non-volatile for >20 years at temperature
• RoHS-compliant TSOP2 and BGA packages available

Benefits:

• One memory replaces FLASH, SRAM, EEPROM and BBSRAM in system for
• simpler, more efficient designs
• Improves reliability by replacing battery-backed SRAM
• Automatic data protection on power loss