Name: Everspin Technologies MR2A16AYS35
Brand: Everspin Technologies
SKU: 4986816
Price: 19.79 USD
Availability: InStock

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Image for illustration purposes only,
refer to technical specifications

Manufacturer Part #

MR2A16AYS35

MR2A16 Series 256 K x 16 Bit 3.3 V 35 ns Asynchronous MRAM Memory - TSOP II-44

MR2A16AYS35 Datasheet
ECAD Model: Convert this file for your ECAD tool by downloading the free Library Loader. Learn more about ECAD model.
Mfr. Name:	Everspin Technologies
Standard Pkg:	Product Variant Information section Available Packaging Package Qty: 135 per Tray Package Style: TSOP II-44 Mounting Method: Surface Mount
Date Code:

Everspin Technologies MR2A16AYS35 - Technical Attributes

Memory Density:	4Mb
Interface Type:	Parallel
Memory Organization:	256 K x 16
Supply Voltage-Nom:	3.3V
Access Time-Max:	35µs
Temperature Range:	0°C to 70°C
Package Style:	TSOP II-44
Mounting Method:	Surface Mount

Features & Applications

The MR2A16AYS35 is a 4 Mb magnetoresistive random access memory (MRAM) device organized as 262,144 words of 16 bits. It is available in 44-pin thin small outline package (TSOP Type 2).

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. The data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Features:

Fast 35 ns Read/Write Cycle
SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign
Unlimited Read & Write Endurance
Data Non-volatile for >20 years at Temperature
One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in System for Simpler, More Efficient Design
Replace battery-backed SRAM solutions with MRAM to improve reliability
3.3 Volt Power Supply
Automatic Data Protection on Power Loss
Commercial, Industrial, Extended Temperatures
RoHS-Compliant SRAM TSOP2 and BGA Packages - MSL Level 3
AEC-Q100 Grade 1 option

View the available MR2A16A series of MRAMs