onsemi — SiC Solutions and Gate Driver Innovation

onsemi New Silicon Carbide Family

EliteSiC MOSFET and Diodes

onsemi's new silicon carbide family, the ‘EliteSiC’, introduces three new members to the series. With reliable, high-efficiency performance for energy infrastructure and industrial drive applications, the 1700 V EliteSiC MOSFET and two 1700 V avalanche-rated EliteSiC Schottky diodes highlight onsemi’s position as a leader in industrial silicon carbide solutions.

The onsemi 1700 V EliteSiC MOSFET features higher breakdown voltage (BV) SiC solutions that comply with high-power industrial application requirements. Both 1700 V avalanche-rated EliteSiC Schottky diodes enable high-voltage operation at elevated temperatures with high efficiency thanks to SiC technology.

5 kVrms 4.5-A/9-A Isolated Dual Channel Gate Driver

NCP51561

The onsemi NCP51561 gate driver boasts dual-channel isolation and impressive current capabilities, with 4.5-A and 9-A source and sink peak current, respectively. Designed to drive power MOSFETs and SiC MOSFET power switches efficiently, the NCP51561 offers quick and matched propagation delays.

With internal galvanic isolation of 5 kVrms and functional isolation between the two output drivers, the NCP51561 is capable of operating at a working voltage of up to 1500 VDC. This driver offers versatility and can be used in various configurations, including two low-side switches, two high-side switches, or a half-bridge driver with adjustable dead time. The ENA/DIS pin offers the option for simultaneous shutdown of both outputs.

Additionally, the NCP51561 features important protective functions such as individual under-voltage lockout for each gate driver and a Dead Time adjustment function.

Features

• 4.5 A Peak Source, 9 A Peak Sink Output Current Capability
• Flexible: Dual Low−Side, Dual High−Side or Half−Bridge Gate Driver
• Independent UVLO Protections for Both Output Drivers
• Output Supply Voltage from 6.5 V to 30 V with 5−V and 8−V for MOSFET, 13−V and 17−V UVLO for SiC, Thresholds.
• Common Mode Transient Immunity CMTI > 200 V/ns
• Propagation Delay Typical 36 ns with
  • 5 ns Max Delay Matching per Channel
  • 5 ns Max Pulse−Width Distortion
• User Programmable Input Logic
  • Single or Dual−Input Modes via ANB
  • ENABLE or DISABLE Mode
• User Programmable Dead−Time
• Isolation & Safety
  • 5 kVRMS Isolation for 1 Minute (per UL1577 Requirements) and 1500 V Peak Differential Voltage between Output Channels
  • 8000 VPK Reinforced Isolation Voltage (per VDE0884−11 Requirements)
  • CQC Certification per GB4943.1−2011
  • SGS FIMO Certification per IEC 62386−1
• These are Pb−Free Devices

Applications

• Motor Drives
• Isolated Converters in DC−DC and AC−DC Power Supply
• Server, Telecom, and Industrial Infrastructures
• UPS and Solar Inverters

Features

• D2PAK-7L package with Kelvin source configuration
• Excellent FOM [ = Rdson * Eoss ]
• New M3S technology: 22 mohm RDS(ON) with low Eon and Eoff losses
• 15V to 18V Gate Drive
• 100% Avalanche Tested
• Halide Free and RoHS Compliant

Applications

• Industrial applications
• UPS / ESS
• Solar
• EV charger

onsemi Silicon Carbide (SiC) MOSFETs

NTBG022N120M3S

The new onsemi family of 1200V M3S planar SiC MOSFETs boasts optimization for swift switching functions. Utilizing planar technology, these MOSFETs reliably handle negative gate voltage drive and sudden spikes on the gate. For optimal performance, a 18V gate drive is recommended, though these devices still perform well with a 15V drive.

New: onsemi Elite Power Simulator

Accelerate time to market and optimize development process

The all new onsemi Elite Power Simulator is the perfect tool for power electronic engineers to accurately represent how their circuits will work using the EliteSiC family of products including manufacturing corner cases of the EliteSiC technology.