High-efficiency power with EliteSiC
onsemi's EliteSiC product portfolio is a range of silicon carbide (SiC) power devices and modules designed to deliver proven quality, robust designs, fully-integrated manufacturing, best-in-class models and guides, and more. SiC is a wide bandgap material that offers significant advantages over traditional silicon-based power devices, including lower switching losses, higher operating temperatures, and higher breakdown voltage.
onsemi New Silicon Carbide Family
EliteSiC MOSFET and Diodes
onsemi's new silicon carbide family, the ‘EliteSiC’, introduces three new members to the series. With reliable, high-efficiency performance for energy infrastructure and industrial drive applications, the 1700 V EliteSiC MOSFET and two 1700 V avalanche-rated EliteSiC Schottky diodes highlight onsemi’s position as a leader in industrial silicon carbide solutions.
The onsemi 1700 V EliteSiC MOSFET features higher breakdown voltage (BV) SiC solutions that comply with high-power industrial application requirements. Both 1700 V avalanche-rated EliteSiC Schottky diodes enable high-voltage operation at elevated temperatures with high efficiency thanks to SiC technology.
The Best of SiC and the Latest for Gate Driver Technology
Maximize efficiency, optimize power
Leverage new and improved SiC solutions, as well as three impressive new additions to the EliteSiC family of products.
In addition, explore how you can optimize efficiency and power in your next design thanks to their new gate driver technology.
5 kVrms 4.5-A/9-A Isolated Dual Channel Gate Driver
The onsemi NCP51561 gate driver boasts dual-channel isolation and impressive current capabilities, with 4.5-A and 9-A source and sink peak current, respectively. Designed to drive power MOSFETs and SiC MOSFET power switches efficiently, the NCP51561 offers quick and matched propagation delays.
With internal galvanic isolation of 5 kVrms and functional isolation between the two output drivers, the NCP51561 is capable of operating at a working voltage of up to 1500 VDC. This driver offers versatility and can be used in various configurations, including two low-side switches, two high-side switches, or a half-bridge driver with adjustable dead time. The ENA/DIS pin offers the option for simultaneous shutdown of both outputs.
Additionally, the NCP51561 features important protective functions such as individual under-voltage lockout for each gate driver and a Dead Time adjustment function.
onsemi Silicon Carbide (SiC) MOSFETs
The new onsemi family of 1200V M3S planar SiC MOSFETs boasts optimization for swift switching functions. Utilizing planar technology, these MOSFETs reliably handle negative gate voltage drive and sudden spikes on the gate. For optimal performance, a 18V gate drive is recommended, though these devices still perform well with a 15V drive.
New: onsemi Elite Power Simulator
Accelerate time to market and optimize development process
The all new onsemi Elite Power Simulator is the perfect tool for power electronic engineers to accurately represent how their circuits will work using the EliteSiC family of products including manufacturing corner cases of the EliteSiC technology.